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       CDBQR00340 Page 1 REV:A 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit VRRM Repetitive peak reverse voltage Symbol Mi Parameter Conditions V 45 VR Reverse voltage V 40 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) 500 PD mW O C 200 +125 -40 Power Dissipation Sunction temperature Tj O C +125 Junction temperature TSTG mA IO Average forward current mA 30 Symbol Min Typ Max Unit Parameter Conditions 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 IR uA 1.5 Forward voltage IF = 1 m A D C VF V 0.37 0.50 CT Capacitance between terimnals pF F = 1 MHZ and 1 VDC reverse voltage Reverse current VR = 3 0V VR = 4 0V 1.00 Features - Designed for mounting on small surface. - Extremely thin package. - Low stored charge. - Majority carrier conduction. Mechanical data - Case: 0402/SOD-923F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.001 gram(approx.). 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. Comchip Technology CO., LTD. QW-A1131 Io = 3 0 mA VR = 4 0 Volts RoHS Device 0402/SOD-923F SMD Schottky Barrier Diode |